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Information card for entry 2008352
Preview
| Coordinates | 2008352.cif |
|---|---|
| Original IUCr paper | HTML |
| Formula | C23 H48 O4 Si4 |
|---|---|
| Calculated formula | C23 H48 O4 Si4 |
| SMILES | [Si]([Si](C)(C)C)([Si](C)(C)C)([Si](C)(C)C)\C=C1C(CCC(C\1)(C(=O)OC)C(=O)OC)C(C)C |
| Title of publication | (<i>E</i>)-Dimethyl 4-isopropyl-3-[tris(trimethylsilyl)silylmethylene]-1,1-cyclohexanedicarboxylate |
| Authors of publication | Moreno-Fuquen, Rodolfo; Jaramillo-Gómez, Luz Marina; Martín-Franco, Jaime |
| Journal of publication | Acta Crystallographica Section C |
| Year of publication | 1999 |
| Journal volume | 55 |
| Journal issue | 4 |
| Pages of publication | 630 - 632 |
| a | 9.6682 ± 0.0009 Å |
| b | 33.169 ± 0.002 Å |
| c | 9.9711 ± 0.0008 Å |
| α | 90° |
| β | 98.82 ± 0.01° |
| γ | 90° |
| Cell volume | 3159.8 ± 0.4 Å3 |
| Cell temperature | 293 ± 2 K |
| Number of distinct elements | 4 |
| Space group number | 14 |
| Hermann-Mauguin space group symbol | P 1 21/n 1 |
| Hall space group symbol | -P 2yn |
| Residual factor for all reflections | 0.1005 |
| Residual factor for significantly intense reflections | 0.0534 |
| Weighted residual factors for all reflections | 0.1799 |
| Weighted residual factors for significantly intense reflections | 0.135 |
| Goodness-of-fit parameter for all reflections | 1.097 |
| Goodness-of-fit parameter for significantly intense reflections | 1.015 |
| Diffraction radiation wavelength | 0.71073 Å |
| Diffraction radiation type | MoKα |
| Has coordinates | Yes |
| Has disorder | No |
| Has Fobs | No |
Version history
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Users of the data should acknowledge the original authors of the
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