Information card for entry 2008866
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| Chemical name |
Bis[μ-{bis(ethanethiolato)-S,N,μ-S'-(ethanethiol)}amine]dinickel(II) |
| Formula |
C12 H26 N2 Ni2 S6 |
| Calculated formula |
C12 H26 N2 Ni2 S6 |
| SMILES |
[Ni]1234SCC[N]1(CC[S]3[Ni]132[N](CC[S]41)(CCS3)CCS)CCS |
| Title of publication |
Bis[μ-2,2',2''-nitrilotriethanethiolato(2 ‒)-<i>N</i>,<i>S</i>,<i>S</i>':<i>S</i>']dinickel(II) |
| Authors of publication |
Davies, Sian C.; Evans, David J.; Hughes, David L.; Longhurst, Steven |
| Journal of publication |
Acta Crystallographica Section C |
| Year of publication |
1999 |
| Journal volume |
55 |
| Journal issue |
9 |
| Pages of publication |
1436 - 1438 |
| a |
23.727 ± 0.003 Å |
| b |
5.837 ± 0.0005 Å |
| c |
14.377 ± 0.002 Å |
| α |
90° |
| β |
98.337 ± 0.01° |
| γ |
90° |
| Cell volume |
1970.1 ± 0.4 Å3 |
| Cell temperature |
293 ± 1 K |
| Ambient diffraction temperature |
293 ± 1 K |
| Number of distinct elements |
5 |
| Space group number |
15 |
| Hermann-Mauguin space group symbol |
A 1 2/a 1 |
| Hall space group symbol |
-A 2ya |
| Residual factor for all reflections |
0.104 |
| Residual factor for significantly intense reflections |
0.044 |
| Weighted residual factors for all reflections included in the refinement |
0.097 |
| Goodness-of-fit parameter for all reflections included in the refinement |
0.963 |
| Diffraction radiation wavelength |
0.71069 Å |
| Diffraction radiation type |
MoKα |
| Has coordinates |
Yes |
| Has disorder |
No |
| Has Fobs |
Yes |
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