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Information card for entry 2200064
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| Coordinates | 2200064.cif |
|---|---|
| Structure factors | 2200064.hkl |
| Original IUCr paper | HTML |
| Chemical name | Di(N-cyclohexyl-N-ethyldithiocarbamato)lead(II) |
|---|---|
| Formula | C18 H32 N2 Pb S4 |
| Calculated formula | C18 H32 N2 Pb S4 |
| SMILES | C1(N(CC)C2CCCCC2)=[S][Pb]2(S1)[S]=C(N(C1CCCCC1)CC)S2 |
| Title of publication | Bis(<i>N</i>-cyclohexyl-<i>N</i>-ethyldithiocarbamato-<i>S</i>,<i>S</i>')lead(II) |
| Authors of publication | Baba, Ibrahim; Farina, Yang; Othman, A. Hamid; Razak, Ibrahim Abdul; Fun, Hoong-Kun; Ng, Seik Weng |
| Journal of publication | Acta Crystallographica Section E |
| Year of publication | 2001 |
| Journal volume | 57 |
| Journal issue | 1 |
| Pages of publication | m35 - m36 |
| a | 9.718 ± 0.0002 Å |
| b | 10.1871 ± 0.0002 Å |
| c | 11.8751 ± 0.0003 Å |
| α | 95.586 ± 0.001° |
| β | 92.978 ± 0.001° |
| γ | 99.142 ± 0.001° |
| Cell volume | 1152.45 ± 0.04 Å3 |
| Cell temperature | 298 ± 2 K |
| Ambient diffraction temperature | 298 ± 2 K |
| Number of distinct elements | 5 |
| Space group number | 2 |
| Hermann-Mauguin space group symbol | P -1 |
| Hall space group symbol | -P 1 |
| Residual factor for all reflections | 0.108 |
| Residual factor for significantly intense reflections | 0.053 |
| Weighted residual factors for all reflections included in the refinement | 0.146 |
| Goodness-of-fit parameter for all reflections included in the refinement | 0.991 |
| Diffraction radiation wavelength | 0.71073 Å |
| Diffraction radiation type | MoKα |
| Has coordinates | Yes |
| Has disorder | No |
| Has Fobs | Yes |
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