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Information card for entry 4000052
Preview
| Coordinates | 4000052.cif |
|---|---|
| Original paper (by DOI) | HTML |
| Formula | C14 H34 Ga N O3 |
|---|---|
| Calculated formula | C14 H34 Ga N O3 |
| SMILES | C[NH]([Ga](OC(C)(C)C)(OC(C)(C)C)OC(C)(C)C)C |
| Title of publication | Synthesis of Homoleptic Gallium Alkoxide Complexes and the Chemical Vapor Deposition of Gallium Oxide Films |
| Authors of publication | Valet, Murielle; Hoffman, David M. |
| Journal of publication | Chemistry of Materials |
| Year of publication | 2001 |
| Journal volume | 13 |
| Journal issue | 6 |
| Pages of publication | 2135 - 2143 |
| a | 10.1444 ± 0.0008 Å |
| b | 12.8117 ± 0.001 Å |
| c | 14.4492 ± 0.0011 Å |
| α | 90° |
| β | 92.085 ± 0.001° |
| γ | 90° |
| Cell volume | 1876.7 ± 0.3 Å3 |
| Cell temperature | 223 ± 2 K |
| Ambient diffraction temperature | 223 ± 2 K |
| Number of distinct elements | 5 |
| Space group number | 14 |
| Hermann-Mauguin space group symbol | P 1 21/n 1 |
| Hall space group symbol | -P 2yn |
| Residual factor for all reflections | 0.0461 |
| Residual factor for significantly intense reflections | 0.0253 |
| Weighted residual factors for significantly intense reflections | 0.0598 |
| Weighted residual factors for all reflections included in the refinement | 0.0663 |
| Goodness-of-fit parameter for all reflections included in the refinement | 0.962 |
| Diffraction radiation wavelength | 0.71073 Å |
| Diffraction radiation type | MoKα |
| Has coordinates | Yes |
| Has disorder | Yes |
| Has Fobs | No |
Version history
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