Crystallography Open Database

Information card for entry 4000141

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Coordinates	4000141.cif
Original paper (by DOI)	HTML

Structure parameters

Formula	C32 H72 O10 Si2 V
Calculated formula	C32 H72 O10 Si2 V
SMILES	CC(O[V](O[Si](OC(C)(C)C)(OC(C)(C)C)OC(C)(C)C)(O[Si](OC(C)(C)C)(OC(C)(C)C)OC(C)(C)C)OC(C)(C)C)(C)C
Journal of publication	Chemistry of Materials
Year of publication	2002
a	9.616 ± 0.002 Å
b	16.597 ± 0.003 Å
c	27.803 ± 0.006 Å
α	90°
β	96.78 ± 0.03°
γ	90°
Cell volume	4406.2 ± 1.5 Å³
Cell temperature	161 ± 2 K
Ambient diffraction temperature	161 ± 2 K
Number of distinct elements	5
Space group number	14
Hermann-Mauguin space group symbol	P 1 21/n 1
Hall space group symbol	-P 2yn
Residual factor for all reflections	0.1216
Residual factor for significantly intense reflections	0.047
Weighted residual factors for all reflections	0.1082
Weighted residual factors for significantly intense reflections	0.0957
Goodness-of-fit parameter for all reflections	0.78
Goodness-of-fit parameter for significantly intense reflections	1.058
Diffraction radiation wavelength	0.71073 Å
Diffraction radiation type	MoKα
Has coordinates	Yes
Has disorder	No
Has F_obs	No

Version history

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