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Information card for entry 4000752
Preview
| Coordinates | 4000752.cif |
|---|---|
| Original paper (by DOI) | HTML |
| Formula | Ga Se2 Ta4 Te6 |
|---|---|
| Calculated formula | Ga Se2 Ta4 Te6 |
| Title of publication | Control of the Electronic Properties and Resistive Switching in the New Series of Mott Insulators GaTa4Se8‒yTey(0 ≤y≤ 6.5) |
| Authors of publication | Guiot, V.; Janod, E.; Corraze, B.; Cario, L. |
| Journal of publication | Chemistry of Materials |
| Year of publication | 2011 |
| Journal volume | 23 |
| Journal issue | 10 |
| Pages of publication | 2611 |
| a | 10.9955 ± 0.0013 Å |
| b | 10.9955 ± 0.0013 Å |
| c | 10.9955 ± 0.0013 Å |
| α | 90° |
| β | 90° |
| γ | 90° |
| Cell volume | 1329.4 ± 0.3 Å3 |
| Cell temperature | 295 K |
| Ambient diffraction temperature | 295 K |
| Number of distinct elements | 4 |
| Space group number | 216 |
| Hermann-Mauguin space group symbol | F -4 3 m |
| Hall space group symbol | F -4 2 3 |
| Residual factor for all reflections | 0.0479 |
| Residual factor for significantly intense reflections | 0.0475 |
| Weighted residual factors for significantly intense reflections | 0.0519 |
| Weighted residual factors for all reflections included in the refinement | 0.0521 |
| Goodness-of-fit parameter for significantly intense reflections | 1.16 |
| Goodness-of-fit parameter for all reflections included in the refinement | 1.15 |
| Diffraction radiation wavelength | 0.71069 Å |
| Diffraction radiation type | MoKα |
| Has coordinates | Yes |
| Has disorder | No |
| Has Fobs | No |
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