Crystallography Open Database

Information card for entry 4001713

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Original paper (by DOI)	HTML

Structure parameters

Formula	C28 H42 N2 S4 Sn
Calculated formula	C28 H42 N2 S4 Sn
SMILES	CCCCCCN(C(=S)S[Sn](c1ccccc1)(c1ccccc1)SC(N(CCCCCC)C)=S)C
Title of publication	Organotin Dithiocarbamates: Single-Source Precursors for Tin Sulfide Thin Films by Aerosol-Assisted Chemical Vapor Deposition (AACVD)
Authors of publication	Ramasamy, Karthik; Kuznetsov, Vladimir L.; Gopal, Kandasamy; Malik, Mohammad A.; Raftery, James; Edwards, Peter P.; O'Brien, Paul
Journal of publication	Chemistry of Materials
Year of publication	2013
Journal volume	25
Journal issue	3
Pages of publication	266 - 276
a	27.282 ± 0.0009 Å
b	17.7669 ± 0.0006 Å
c	18.6716 ± 0.0006 Å
α	90°
β	96.77 ± 0.003°
γ	90°
Cell volume	8987.3 ± 0.5 Å³
Cell temperature	100 ± 2 K
Ambient diffraction temperature	100 ± 2 K
Number of distinct elements	5
Space group number	15
Hermann-Mauguin space group symbol	C 1 2/c 1
Hall space group symbol	-C 2yc
Residual factor for all reflections	0.0447
Residual factor for significantly intense reflections	0.0339
Weighted residual factors for significantly intense reflections	0.0821
Weighted residual factors for all reflections included in the refinement	0.0857
Goodness-of-fit parameter for all reflections included in the refinement	1.054
Diffraction radiation wavelength	0.71073 Å
Diffraction radiation type	MoKα
Has coordinates	Yes
Has disorder	No
Has F_obs	No

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