Crystallography Open Database

Information card for entry 4001661

Preview

Coordinates	4001661.cif
Original paper (by DOI)	HTML

Structure parameters

Formula	C24 H63 In N2 O3 Si4 Sn
Calculated formula	C24 H63 In N2 O3 Si4 Sn
SMILES	[In]1([O]([Sn]([O]1C(C)(C)C)OC(C)(C)C)C(C)(C)C)(N([Si](C)(C)C)[Si](C)(C)C)N([Si](C)(C)C)[Si](C)(C)C
Title of publication	Facile Molecular Approach to Transparent Thin-Film Field-Effect Transistors with High-Performance Using New Homo- and Heteroleptic Indium(III)‒Tin(II) Single-Source Precursors
Authors of publication	Samedov, Kerim; Aksu, Yilmaz; Driess, Matthias
Journal of publication	Chemistry of Materials
Year of publication	2012
Journal volume	24
Journal issue	11
Pages of publication	2078
a	11.1655 ± 0.0002 Å
b	20.1365 ± 0.0004 Å
c	33.784 ± 0.0006 Å
α	90°
β	90°
γ	90°
Cell volume	7595.8 ± 0.2 Å³
Cell temperature	173 ± 2 K
Ambient diffraction temperature	173 ± 2 K
Number of distinct elements	7
Space group number	61
Hermann-Mauguin space group symbol	P b c a
Hall space group symbol	-P 2ac 2ab
Residual factor for all reflections	0.1001
Residual factor for significantly intense reflections	0.0608
Weighted residual factors for significantly intense reflections	0.0802
Weighted residual factors for all reflections included in the refinement	0.088
Goodness-of-fit parameter for all reflections included in the refinement	1.147
Diffraction radiation wavelength	0.71073 Å
Diffraction radiation type	MoKα
Has coordinates	Yes
Has disorder	No
Has F_obs	No

Version history

Version history is temporarily not available due to server issues.