Crystallography Open Database

Information card for entry 4001662

Preview

Coordinates	4001662.cif
Original paper (by DOI)	HTML

Structure parameters

Formula	C32.94 H66.37 Cl6.51 In3 O8.49 Sn4
Calculated formula	C32.944 H66.374 Cl6.514 In3 O8.486 Sn4
SMILES	CC([O]1[Sn]2[O]([In]34([O]2([Sn]1[O]3C(C)(C)C)[In]([O]4C(C)(C)C)(Cl)(Cl)(Cl)[O]12[Sn]3[O]([In]1([O](C(C)(C)C)[Sn]2[O]3C(C)(C)C)(Cl)Cl)C(C)(C)C)Cl)C(C)(C)C)(C)C.Cc1ccccc1.CC([O]1[Sn]2[O]([In]34([O]2([Sn]1[O]3C(C)(C)C)[In]([Cl]4)(Cl)(Cl)(Cl)[O]12[Sn]3[O]([In]1([O](C(C)(C)C)[Sn]2[O]3C(C)(C)C)(Cl)Cl)C(C)(C)C)Cl)C(C)(C)C)(C)C.Cc1ccccc1
Title of publication	Facile Molecular Approach to Transparent Thin-Film Field-Effect Transistors with High-Performance Using New Homo- and Heteroleptic Indium(III)‒Tin(II) Single-Source Precursors
Authors of publication	Samedov, Kerim; Aksu, Yilmaz; Driess, Matthias
Journal of publication	Chemistry of Materials
Year of publication	2012
Journal volume	24
Journal issue	11
Pages of publication	2078
a	34.3847 ± 0.0008 Å
b	12.4962 ± 0.0002 Å
c	25.0818 ± 0.0005 Å
α	90°
β	95.641 ± 0.002°
γ	90°
Cell volume	10724.9 ± 0.4 Å³
Cell temperature	150 ± 2 K
Ambient diffraction temperature	150 ± 2 K
Number of distinct elements	6
Space group number	15
Hermann-Mauguin space group symbol	C 1 2/c 1
Hall space group symbol	-C 2yc
Residual factor for all reflections	0.0526
Residual factor for significantly intense reflections	0.031
Weighted residual factors for significantly intense reflections	0.0489
Weighted residual factors for all reflections included in the refinement	0.0524
Goodness-of-fit parameter for all reflections included in the refinement	0.942
Diffraction radiation wavelength	0.71073 Å
Diffraction radiation type	MoKα
Has coordinates	Yes
Has disorder	Yes
Has F_obs	No

Version history

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